7 edition of Chemical Mechanical Polishing in Silicon Processing, Volume 63 (Semiconductors and Semimetals) found in the catalog.
October 15, 1999
by Academic Press
Written in English
|Contributions||Shin M. Hwa Li (Editor), Robert M. Miller (Editor), Robert K. Willardson (Series Editor), Eicke R. Weber (Series Editor)|
|The Physical Object|
|Number of Pages||307|
Get this from a library! Chemical mechanical polishing in silicon processing. [Shin Hwa Li; Robert O Miller;] -- Since its inception in , the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and. Mechanochemical polishing (MCP) uses mechanical energy to activate chemical reactions and structural changes. The processing of highly flat surfaces with few defects has been made possible by this method. Recently, the so-called chemical-mechanical polishing (CMP) has been applied to the fine processing of electronic devices.
Chemical Mechanical Polishing in Silicon Processing. provides the latest information on a mainstream process that is critical for high-volume, high-yield . One of the main challenges to integrating a low-dielectric constant (low-kappa) insulator as a replacement for silicon dioxide is the behavior of such materials during the chemical-mechanical planarization (CMP) process used in Damascene patterning.
In this article, the authors report experimental results of the chemical mechanical polishing (CMP) of silicon dioxide (SiO2) and polysilicon to produce nanoscale features with very smooth surfaces. The sizes of the features polished ranged from 30tonm. For polysilicon polishing, the nanostructures were defined in positive tone e-beam resist and the pattern was transferred to the oxide. In simpler notation, CMP is a process where a chemical reaction enhances in obtaining a planar surface through removal of the mechanical materials from a wafer. In this study, CMP performance of three electronic materials was investigated. Chemical vapor deposited (CVD) diamond films, as a first materials, was fabricated.
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Chemical Mechanical Polishing in Silicon Processing Edited by R.K. Willardson, Eicke R. Weber Vol Chemical Mechanical Polishing in Silicon Processing ii-xv, (). Chemical Mechanical Polishing in Silicon Processing SEMICONDUCTORS AND SEMIMETALS Volume 63 Volume Editors SHIN HWA LI ROBERT 0.
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Semiconductors and Semimetals Chapters in Chemical Mechanical Polishing in Silicon Processing. Chemical Mechanical Polishing in Silicon Processing | | download | B–OK. Download books for free. Find books. Chemical mechanical polishing (CMP) is a semiconductor process technology that has been used for integrated circuit (IC) manufacturing for more than 20 years.
It was invented by IBM  to solve a significant roadblock to the scaling of semiconductor technology in the s.
Silicon substrates are used in optical components for infrared systems and mirror systems. An alternative to processing of optical silicon substrates is chemical mechanical polishing (CMP). The conventional CMP uses a three-body abrasion. In this work, a two-body abrasion CMP, called the fixed abrasive CMP, is performed on silicon substrates.
During the fabrication of various silicon-based devices, chemical mechanical planarization is used to achieve planarity at each level of a multilevel metallization interconnect structure.
In the shallow trench isolation (STI) process, 1 the first step involves the deposition of an isolation stack on a bare Si wafer. The stack generally consists.
Slurry compositions and chemically activated CMP methods for polishing a substrate having a silicon carbide surface using such slurries. In such methods, the silicon carbide surface is contacted with a CMP slurry composition that comprises i) a liquid carrier and ii) a plurality of particles having at least a soft surface portion, wherein the soft surface portion includes a transition metal.
Tardif, François Chemical Mechanical Polishing in Silicon 63, Issue., p. Books. Silicon processing for the VLSI Era — Vol. IV Deep-submicron Process Technology — S Wolf,ISBNChapter 8 "Chemical mechanical polishing" pp.
In order to clarify the mechanism of mechanochemical polishing of SiC with Cr 2 O 3 abrasive, 6H‐wurtzite single‐crystal specimens were dry‐polished. A significant anisotropic polishing rate difference was found between Si() and C( 1) C( 1) surface was removed 10 times as ed surfaces were observed from cross‐sectional and plan‐view directions by high.
Since the Ce-O-Si bonds are stronger than Si-O-Si bonds, this results in the polishing of the silicon dioxide surface by both chemical and mechanical actions (Figure 2a). 13 Thus, SiO 2 is removed one molecule at a time, as Si(OH) 4. Chemical mechanical polishing (CMP) is used to remove irregularities on the silicon wafer surface.
The importance of CMP is the achievement of both local and global planarity of wafer surface. This paper presents an economic study on CMP of silicon wafers. A cost model is developed to predict the total cost for CMP of silicon wafers.
In this paper, material removal mechanism of monocrystalline silicon by chemical etching with different solutions were studied to find effective oxidant and stabilizer.
Material removal mechanism by mechanical loads was analyzed based on the measured acoustic signals in the scratching processes and the observation on the scratched surfaces of silicon wafers. In this study, a novel finishing method, entitled clustered magnetorheological finish (CMRF), was proposed to improve surface finish of the silicon nitride (Si 3 N 4) balls with ultra fine precision.
The effects of different polishing parameters including rotation speeds, eccentricities and the machining gaps on surface finish of Si 3 N 4 balls were investigated by analyzing the roughness.
A scratch intersection based material removal mechanism for CMP processes is proposed in this paper. The experimentally observed deformation pattern by SEM and the trends of the measured force profiles (Che et al., ) reveal that, for an isolated shallow scratch, the material is mainly plowed sideway along the track of the abrasive particle with no net material removal.
In an effort to improve the silicon carbide (SiC) substrate surface, a new electro-chemical mechanical polishing (ECMP) technique was developed.
This work focused on the Si-terminated 4H-SiC () substrates cut 8° off-axis toward 〈〉. Hydrogen peroxide (H2O2) and potassium nitrate (KNO3) were used as the electrolytes while using colloidal silica slurry as the polishing medium for.Chemical Mechanical Polishing of Silicon Carbide The High Temperature Integrated Electronics and Sensors (HTIES) team at the NASA Lewis Research Center is developing silicon carbide (SiC) as an enabling electronic technology for many aerospace applications.
The ability of SiC to function under high.Chemical mechanical polishing in silicon processing. San Diego, CA: Academic Press, © (OCoLC) Material Type: Internet resource: Document Type: Book, Internet Resource: All Authors / Contributors: Shin Hwa Li; Robert O Miller.